Aluminum Nitride (AlN)

Product Concept

With the rapid advancement of "Photo-Electronic Convergence Technology," "High-Frequency Support," "High-Power Supplies," and "High-Output LDs/LEDs," semiconductor devices are becoming increasingly powerful and densely integrated. To ensure the reliability of these devices, it has become essential to simultaneously achieve high heat dissipation, low thermal expansion, and long-term stability.

To meet these demanding requirements, NTK CERAMIC has developed Aluminum Nitride (AlN) Ceramic Multilayer Packages featuring superior thermal properties. Through our proprietary material technology and multilayer structures, we support the stable operation and extended lifespan of next-generation semiconductor devices, even under extreme conditions.

Prototypes

Aluminum Nitride (AlN)

Thin film circuit substrate(Size 50 mm sq.)

Aluminum Nitride (AlN)

LCC(Size 7.95 x 5.41/SMD0.2)

Aluminum Nitride (AlN)

DIP(Size 40x15x2.3mmt)

Aluminum Nitride (AlN)

Large size substrat(Size φ300mm)

Key Features

  • Superior Heat Dissipation: 170 W/(m·K)
  • CTE closely matched to Silicon: 4.9 (x10-6/K)
  • Stable Substrate for High-Reliability and High-Output Devices
  • Cavity Structures Available

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