Aluminum Nitride (AlN)
Product Concept
With the rise of technologies such as "Photoelectronic Convergence," "High-Frequency Compatibility," "High-Power Supplies, " and "High-Output LD/LEDs," semiconductor devices are rapidly becoming more powerful and densely integrated.
To ensure device reliability, there is a growing and simultaneous demand for high heat dissipation, low thermal expansion, and long-term stability. In response to these challenges,
NTK CERAMIC has developed Aluminum Nitride (AlN) ceramic multilayer packages as the ideal material solution.
Prototypes
-
Thin film circuit substrate（Size 50 mm sq.）
-
LCC（Size 7.95 x 5.41/SMD0.2）
-
DIP（Size 40x15x2.3mmt）
-
Large size substrat（Size φ300mm）
Key Features
- Superior Heat Dissipation: 170 W/(m·K)
- CTE closely matched to Silicon: 4.9 (x10-6/K)
- Stable Substrate for High-Reliability and High-Output Devices
- Cavity Structures Available
